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180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm

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9 Author(s)
Hill, R.J.W. ; Nanoelectronics Res. Centre, Univ. of Glasgow ; Moran, D.A.J. ; Li, X. ; Zhou, H.
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Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions

Published in:

Electronics Letters  (Volume:43 ,  Issue: 9 )

Date of Publication:

April 26 2007

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