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Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process

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3 Author(s)
Gan, K.J. ; Dept. of Electron. Eng., Kun Shan Univ., Taiwan ; Tsai, C.-S. ; Sun, W.-L.

A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width/length parameters of the MOS devices, the fabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the standard 0.35 mum SiGe process was demonstrated

Published in:

Electronics Letters  (Volume:43 ,  Issue: 9 )