Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Deal, W.R. ; Northrop Grumman Corp., Redondo Beach, CA ; Mei, X.B. ; Radisic, V. ; Yoshida, W.
more authors

In this letter, the first 270-GHz millimeter-wave integrated circuit (MMIC) amplifier is demonstrated. Peak measured gain of 11.6-dB is measured for the three stage amplifier realized in coplanar waveguide. Further, positive S21 gain is measured to 340GHz making this the highest frequency MMIC amplifier reported to date. The high frequency circuit performance is enabled through a 35-nm InP high electron mobility transistor capable of extremely high frequency operation

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:17 ,  Issue: 5 )