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Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology

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11 Author(s)
Deal, W.R. ; Northrop Grumman Corp., Redondo Beach, CA ; Mei, X.B. ; Radisic, V. ; Yoshida, W.
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In this letter, the first 270-GHz millimeter-wave integrated circuit (MMIC) amplifier is demonstrated. Peak measured gain of 11.6-dB is measured for the three stage amplifier realized in coplanar waveguide. Further, positive S21 gain is measured to 340GHz making this the highest frequency MMIC amplifier reported to date. The high frequency circuit performance is enabled through a 35-nm InP high electron mobility transistor capable of extremely high frequency operation

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:17 ,  Issue: 5 )