1.3- mu m GaInAsP/InP transverse-mode stabilized buried-crescent lasers by a new fabrication technique using a reactive ion beam etching

Transverse-mode-stabilized, 1.3- mu m, GaInAsP/InP, buried-crescent (BC) lasers fabricated using a reactive ion beam etching (RIBE) technique are presented. Yields of single-transverse-mode operation as high as 95% are achieved with low threshold currents of 11-25 mA. Transverse-mode stability under both high-power and long-term operation (50 degrees C, 20 mW, 1000 h) is demonstrated. A coupling efficiency into a single-mode fiber of 63% and a coupled power of 40 mW at 160 mA are achieved. Stable continuous-wave operation is also confirmed under a constant power of 5 mW (50 and 70 degrees C) and 20 mW (50 degrees C) in an aging test.<
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