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Improvement of Reliability of GaN-Based Light-Emitting Diodes by Selective Wet Etching With p-GaN

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6 Author(s)
Ga-Young Ha ; Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. ; Park, Tae-Young ; Kim, Ja-Yeon ; Kim, Dong-Joon
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In an attempt to enhance the reliability of GaN-based light-emitting diodes (LEDs), the selective wet chemical etching of p-GaN surface in the GaN-based LEDs using KOH+NaOH in an ethylene glycol solution was investigated. The leakage currents of the etched LED under forward and reverse bias voltages were much lower, compared to those of a nonetched LED. The etched LED also showed improved light extraction efficiency and the degradation rate of light output power at a high injection current of 300 mA was slower than that for a nonetched LED. These results can be attributed to a decrease in the surface defects, an increase in hole concentration, and the increased surface roughness of the etched p-GaN

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 11 )