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Mechanical Stress and Defect Formation in Device-Processing: Validity of the Numerical Models for Mechanical Stress Calculation

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4 Author(s)
Polignano, M.L. ; STMicroelectronics, Agrate Brianza ; Carnevale, G.P. ; Mica, I. ; Pastore, C.

In this paper, the paper addressed the problem of estimating the risk of crystal defect generation in a complex device process. The validity of numerical calculations of the mechanical stress developed in the device process flow is assessed by comparing these calculations to the results of the electrical tests of structures designed to monitor the formation of dislocations. The results show that, based upon numerical calculations, it is possible to define the mechanical stress criteria for preventing defect generation. By using this sort of criteria, potentially dangerous process variations can be easily identified. This method is quite general and can be applied to any device process flow

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Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 5 )