By Topic

Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lucci, L. ; Dipt. di Ingegneria Elettrica, Gestionale, e Meccanica, Udine Univ. ; Palestri, P. ; Esseni, D. ; Bergagnini, L.
more authors

This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect the transport properties and, in particular, the injection velocity and the channel back-scattering

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 5 )