By Topic

Optimized Device Characteristics of Lateral Spin Valves

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Johnson, Mark ; Naval Res. Lab., Washington DC, WA

The lateral spin valve is a planar ferromagnet/nonmagnet/ferromagnet (F1/N/F2) structure with a resistance modulation DeltaR that derives from a nonequilibrium population of spin-polarized conduction electrons. This paper analyzes the characteristics of a future-generation all-metal device fabricated with minimum feature size f of 50 nm. Theoretical principles of operation are reviewed, and the "inverse scaling" rule is derived: Output resistance modulation varies inversely with the volume of the nonmagnetic material in the device. The thermodynamic formalism of Johnson and Silsbee is also used to study details of charge and spin transport at the F/N interface and to understand the limits of the fractional polarization of injected current. Experiments on lateral spin valves with N channels having widths of 150 nm are described. A high fractional polarization is observed for structures with low interface resistance. A survey of recent results on similar devices shows that inverse scaling is upheld over ten decades of sample volume. Using these experimentally observed parameters and extrapolating further to f = 50 nm, a spin-accumulation device that is fabricated to have an output impedance of 50 Omega and an output modulation of 50 Omega (DeltaR/R = 100%) is discussed

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 5 )