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Study of a New Field-Effect Resistive Hydrogen Sensor Based on a Pd/Oxide/AlGaAs Transistor

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8 Author(s)
Hung, Ching-Wen ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan ; Hung-Chi Chang ; Tsai, Yan-Ying ; Lai, Po-Hsien
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A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H2 /air) and higher sensitivity (24.7% in 9970 ppm H2/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Omega) and a smaller operating voltage (les 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (ges 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 5 )

Date of Publication:

May 2007

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