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A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

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7 Author(s)
Jin He ; Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing ; Feng Liu ; Jian Zhang ; Jie Feng
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This paper presents a carrier-based approach to develop a compact model for long-channel undoped symmetric double-gate MOSFETs. The formulation starts from a solution of the Poisson's equation that is coupled to the Pao-Sah current formulation to obtain an analytic drain-current model in terms of the carrier concentration. The model provides an analytical expression to describe the dependence of the surface potential, silicon-film centric potential, inversion charge, and the current on the silicon-body thickness and the gate-oxide thickness. The model calculation is verified by comparing results to the 2D numerical simulations, and good agreement is observed

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 5 )

Date of Publication:

May 2007

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