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Analytical Determination of MOSFET's High-Frequency Noise Parameters From NF _{50} Measurements and Its Application in RFIC Design

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6 Author(s)
Saman Asgaran ; Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont. ; M. Jamal Deen ; Chih-Hung Chen ; G. Ali Rezvani
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An analytical method, along with closed-form solutions, to determine high-frequency (HF) noise parameters of the MOSFET from its noise figure (NF) measurements with an arbitrary source impedance is presented and experimentally verified. This method allows for the determination of the minimum noise figure, NFmin, equivalent noise resistance, Rn, and optimum source admittance Yopt , of MOSFET directly from a single high-frequency 50-Omega noise figure measurement and a model characterization based on the transistor's measured scattering parameters. The proposed method can accurately predict the noise parameters of deep-submicron MOSFETs, and hence is useful in the design of low-noise radio-frequency integrated circuits (RFICs). Application of the proposed method in the design of CMOS RF low-noise amplifiers (LNAs) is also discussed

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 5 )