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Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High-Performance Thin-Film Transistors

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6 Author(s)
Sugawara, Yuta ; Nara Inst. of Sci. & Technol. ; Uraoka, Y. ; Yano, H. ; Hatayama, T.
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We report a new laser crystallization method employing double-layered amorphous-Si ( a-Si) thin films for solid green laser annealing (GLA) crystallization that is called GLA double-layered x'tallization (GLADLAX). Crystallization of the upper and lower a-Si layers of the double-layered substrate at a single laser scanning was achieved, with the upper a-Si becoming poly-Si with very large crystal grains and the lower a-Si layer becoming microcrystalline Si. Thin-film transistors using the upper layer of poly-Si that is crystallized by the method as their active channels had excellent switching performance, with their mobility exceeding 350 cm2/Vmiddots, demonstrating promising applicability of GLADLAX to thin-film electronics

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )