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Impacts of Notched-Gate Structure on Contact Etch Stop Layer (CESL) Stressed 90-nm nMOSFET

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7 Author(s)
Chien-Ting Lin ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; Yean-Kuen Fang ; Wen-Kuan Yeh ; Chieh-Ming Lai
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In this letter, mobility improvements by stress contact etch stop layer (CESL) in a strained 90-nm nMOSFET, with and without notched-gate structure, were studied in detail. Compared to the conventional vertical gate, a device with notched gate shows an extra 7% NMOS ION enhancement for the increased stress in the channel region and the less effect of the halo-implanted impurity on channel. Both simulations with TCAD software and measurements confirm that the notched-gate structure efficiently enhances the generation of high tensile stress on the channel region from the CESL and more localized pocket implant

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )