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Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13- \mu\hbox {m} pMOSFET

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8 Author(s)
Rui Li ; Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai ; Wei-Ran Kong ; Kai Tao ; Liu-Jiang Yu
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Mechanical stress-enhanced plasma process-induced damage (PPID) in 0.13-mum pMOSFET was investigated. The PPID, which was initially charged neutral, became positively charged during hydrogen annealing, thus, changing the PMOS threshold voltage (Vth). Different device structures were designed to evaluate the mechanical stress effects on PPID. The features of these positive charges, including the PPID induced Vth shift, and its channel length dependence were also investigated

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )