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Extraction of \pi -Type Substrate Resistance Based on Three-Port Measurement and the Model Verification up to 110 GHz

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3 Author(s)
In Man Kang ; Sch. of Electr. Eng., Seoul Nat. Univ. ; Jong Duk Lee ; Hyungcheol Shin

An analytical parameter-extraction method for pi-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified that pi-type substrate resistance model is more accurate than other substrate resistance models

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )