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A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory

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8 Author(s)
Tzu-Hsuan Hsu ; Emerging Central Lab., Macronix Int. Co. Ltd, Hsinchu ; Hang-Ting Lue ; Ya-Chin King ; Jung-Yu Hsieh
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A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome the unsolvable tradeoff between retention and erase speed of the conventional SONOS. Compared with the current floating-gate Flash devices, FinFET BE-SONOS provides both retention and erase-speed performance, while eliminating the scaling limitations and is, thus, an important candidate for further scaling of nand Flash

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )