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A Dynamical Power-Management Demonstration Using Four-Terminal Separated-Gate FinFETs

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12 Author(s)
Endo, K. ; Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki ; Ishikawa, Y. ; Liu, Y.X. ; Matsukawa, T.
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Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )