Referenced Items are not available for this document.
Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
5
)
Date of Publication: May 2007
- Page(s):
- 452 - 454
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9412856
- Digital Object Identifier :
- 10.1109/LED.2007.895451
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 April 2007
- Issue Date :
- May 2007
- Sponsored by :
- IEEE Electron Devices Society
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