Cart (Loading....) | Create Account
Close category search window

A New Lateral-IGBT Structure With a Wider Safe Operating Area

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

A new lateral insulated gate bipolar transistor (LIGBT) for junction-isolated technologies is presented. The nLIGBT is integrated in an existing smart power technology without changing any process layers. The technology has a 0.35-mum CMOS core and is extended with five process layers in order to handle up to 80 V. The drift region of the nLIGBT is completely surrounded by p+ regions, creating a very effective hole bypass or diverter structure. This yields an LIGBT with a very wide safe operating area. The device has a breakdown voltage of 75 V and is able to operate up to 47 V (dc) when the gate is fully open. Furthermore, this device turns off without current tail, resulting in extremely fast turn-off times, which are solely determined by the voltage-rise phase. A true competitor for the quasi-vertical n-type drain extended metal oxide semiconductor (nDEMOS) in this technology is created

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 5 )

Date of Publication:

May 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.