Cart (Loading....) | Create Account
Close category search window
 

Data retention time of MFIS-FET memory structure improved with nitrogen and oxygen radical irradiation treatment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Le Van Hai ; Dept. of Syst. Innovation, Osaka Univ., Japan ; Kanashima, T. ; Okuyama, Masanori

Metal-ferroelectric-insulator-semiconductor (MFIS) structure has been prepared using SrBi2Ta2O9 thin film whose surface was modified by irradiation of nitrogen or oxygen radical. By this modifying, leakage current is reduced and C-V characteristic shows clear memory window and sharp slopes that correspond to good interface layer. characterization of x-ray photoelectron spectroscopy and ultraviolet photoyield spectroscopy have exhibited that the SBT thin films with nitrogen treatment have the higher threshold energy than that without the irradiation. Memory window of the MFIS structures are in the range of 1-2V when the gate voltage is varied from 3-6V. Retention time of ON and OFF states is 1 week in the structure irradiated with oxygen radical and 12 days in that with nitrogen radical although that without the irradiation is only 3 hours.

Published in:

Communications and Electronics, 2006. ICCE '06. First International Conference on

Date of Conference:

10-11 Oct. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.