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High-performance long-wavelength InGaAs=GaAs multiple quantum-well lasers grown by molecular beam epitaxy

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4 Author(s)
Adolfsson, G. ; Dept. of Microelectron. & Nanoscience, Chalmers Univ. of Technol., Goteborg ; Wang, S.M. ; Sadeghi, M. ; Larsson, A.

High-quality 1.2 mum InGaAs/GaAs single and triple quantum-well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2 /well is achieved for a 100 times1000 mum laser

Published in:

Electronics Letters  (Volume:43 ,  Issue: 8 )