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Arrays of Addressable Microcavity Plasma Devices

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5 Author(s)
Park, S.-J. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL ; Tchertchian, P.A. ; Sung, S.H. ; Spinka, T.M.
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Addressable microcavity plasma devices with two- or three-electrode, dielectric barrier designs have been fabricated in 20 times 20 or 50 times 50 device arrays in Si(100) and characterized in the rare gases. Each device comprises a metal/Si electrode structure, a dielectric stack, and an inverted square pyramid microcavity having an emitting aperture of 50times50 mum2 or 100times100 mum2. Arrays with filling factors of 11% and 25% [for (100 mum)2 and (50 mum)2 device arrays, respectively] and a crossed electrode (passive matrix) geometry exhibit operating voltages in Ne of ~220-300 V (RMS) when driven by a 20-kHz sinusoidal driving voltage. Displacement currents are ~50% of those for previous Si microplasma device arrays, and when exciting the array with 100-140-V pulses, the rise time of the wavelength-integrated fluorescence is observed to be < 600 ns for pure Ne or Ne/5%Xe gas mixtures at a pressure of 700 torr. A full address and sustain pulse sequence has also been demonstrated with a symmetrical three-electrode device structure

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Plasma Science, IEEE Transactions on  (Volume:35 ,  Issue: 2 )