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A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation

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9 Author(s)
Tsuji, H. ; Div. of Electr., Electron. & Inf. Eng., Osaka Univ. ; Kuzuoka, T. ; Kishida, Y. ; Shimizu, Y.
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A new surface potential based poly-Si TFT model for circuit simulation was developed, accounting for the influence of both deep and tail states across the band gap. The model describes the drain current for all regions of operation using the unified equation. Calculations using the drain current model produce results that are in good agreement with the measured I-V characteristics of poly-Si TFTs

Published in:
Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference: 11-13 Dec. 2006

Page(s):
1 - 4
E-ISBN :
1-4244-0439-8
Print ISBN:
1-4244-0438-X
INSPEC Accession Number:
9485733
Conference Location :
San Francisco, CA
Digital Object Identifier :
10.1109/IEDM.2006.346991
Product Type:
Conference Publications

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