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Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation

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14 Author(s)
Yoo, D.C. ; Semicond. R&D Div., Samsung Electron. Co. Ltd., Gyeonggi-Do ; Lee, C.M. ; Bae, B.J. ; Kim, I.S.
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Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O3 (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at grain boundary region by PFM technique. Moreover, 15 nm-sized domain dot was successfully demonstrated on 50 nm-thick PZT media. Also for the first time, we successfully demonstrated that the polycrystalline ultra thin 7 nm-thick PZT media has good ferroelectric properties

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006