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Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

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20 Author(s)
Cohen, M. ; STMicroelectronics, Crolles ; Roy, F. ; Herault, D. ; Cazaux, Y.
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An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise, A full 3MP demonstrator with 1.75μ pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006