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Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS

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26 Author(s)
Haizhou Yin ; IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY ; Sung, C.Y. ; Ng, H. ; Saenger, K.L.
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Two integration schemes for hybrid crystal orientation technology using direct silicon bonded (DSB) substrates and solid phase epitaxy (SPE) processes have been implemented. The shallow-trench-isolation (STI) before SPE approach suffers from trench-edge defects formed at STI edges, which causes high leakage current. The SPE-before-STI approach allows removal of edge defects of SPE by STI. SRAM in 65nm node and eDRAM in 90nm node have been demonstrated on DSB using the SPE-before-STI scheme

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006