High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates

CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSi_x and TiN were applied to nFETs and pFETs, respectively. TiN/HfO₂ damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and T_inv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm² and below