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Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

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10 Author(s)
Yongxun Liu ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba ; Matsukawa, T. ; Endo, K. ; Masahara, M.
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We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006