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High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

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6 Author(s)
Suh, C.-S. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; Dora, Y. ; Fichtenbaum, N. ; McCarthy, L.
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Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage (VBD) and low on-resistance (RON). Combination of the self-aligned slant field-plate technology for high VBD and self-aligned CF4 plasma treatment for E-mode operation yielded high-performance device with a VBD of 1400V, which is one of the highest reported VBD value among GaN-based E-mode HEMTs. Using the active area of the device, the RON was calculated to be below 3mOmegamiddotcm2

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006