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Highly Manufacturable TiN Metal Gate Nanorod Transistors Realized on Silicon-On-ONO (SOONO) Substrate

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13 Author(s)
Sung Hwan Kim ; Device Research Team, R&D Center, Samsung Electronics Co., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do, KOREA, 449-711. Phone: 82-31-209-4025, Fax: 82-31-209-9861, E-mail: ; Chang Woo Oh ; Yong Lack Choi ; Sung-In Hong
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In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for nMOS and 1.0 mA/mum for pMOS are achieved at Ioff=100 nA/mum and VD =1.0 V. Thus, it is proven that laterally and vertically scaled nanorod transistors can be a promising solution for ultimate scaling

Published in:

2006 International Electron Devices Meeting

Date of Conference:

11-13 Dec. 2006