By Topic

Highly Manufacturable TiN Metal Gate Nanorod Transistors Realized on Silicon-On-ONO (SOONO) Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Sung Hwan Kim ; Device Research Team, R&D Center, Samsung Electronics Co., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do, KOREA, 449-711. Phone: 82-31-209-4025, Fax: 82-31-209-9861, E-mail: toshk@samsung.com ; Chang Woo Oh ; Yong Lack Choi ; Sung-In Hong
more authors

In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for nMOS and 1.0 mA/mum for pMOS are achieved at Ioff=100 nA/mum and VD =1.0 V. Thus, it is proven that laterally and vertically scaled nanorod transistors can be a promising solution for ultimate scaling

Published in:

2006 International Electron Devices Meeting

Date of Conference:

11-13 Dec. 2006