Cart (Loading....) | Create Account
Close category search window
 

Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

14 Author(s)
Jung, Soon-Moon ; R&D Center, Samsung Electron., Kyungki-do ; Jang, Jaehoon ; Cho, Wonseok ; Cho, Hoosung
more authors

For the first time, the 3 dimensionally stacked NAND Flash memory, is developed by implementing S3 (single-crystal Si layer stacking) technology, which was used to develop S3 SRAM previously. The NAND cell arrays are formed on the ILD as well as on the bulk to double the memory density without increasing the chip size. The feasibility of the technology was proven by the successful operation of 32 bit NAND flash memory cell strings with 63nm dimension and TANOS structures. The novel NAND cell operational scheme, so called SBT (source-body tied) scheme, is presented to maximize the advantages of 3 dimensionally stacked NAND cell structures

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.