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Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling

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4 Author(s)
Gurfinkel, M. ; Dept. of Mech. Eng., Maryland Univ., College Park, MD ; Suehle, J.S. ; Bernstein, J.B. ; Shapira, Yoram

High-K dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006