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A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications

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16 Author(s)

Record breaking RF performance was recently achieved on a 65nm CMOS technology (29nm Lgate, 210nm pitch) employing uni-axial strained silicon transistors. These highest-reported cutoff frequencies for NMOS transistors achieve fT/fMAX values of 360 GHz/420 GHz. PMOS transistors also demonstrate superior performance with fT/fMAX values of 238 GHz/295 GHz. Varactor performance on this substrate technology is also discussed

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006