Referenced Items are not available for this document.
Record breaking RF performance was recently achieved on a 65nm CMOS technology (29nm Lgate, 210nm pitch) employing uni-axial strained silicon transistors. These highest-reported cutoff frequencies for NMOS transistors achieve fT/fMAX values of 360 GHz/420 GHz. PMOS transistors also demonstrate superior performance with fT/fMAX values of 238 GHz/295 GHz. Varactor performance on this substrate technology is also discussed
Published in:
Electron Devices Meeting, 2006. IEDM '06. International
Date of Conference: 11-13 Dec. 2006
- Page(s):
- 1 - 3
- E-ISBN :
- 1-4244-0439-8
- Print ISBN:
- 1-4244-0438-X
- INSPEC Accession Number:
- 9485631
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/IEDM.2006.346816
- Product Type:
- Conference Publications
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