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Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement

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8 Author(s)

We report performance optimization techniques for FinFETs with Si 0.99C0.01 source and drain (S/D) regions and sub-30 nm gate lengths. By scaling up the Si0.99C0.01 stressor thickness, a ~9% IDsat enhancement can be obtained. A further 16% IDsat enhancement can be achieved with the adoption of slim spacers. Carrier backscattering study was performed to clarify the carrier transport characteristics such as ballistic efficiency and carrier source injection, showing consistency with observed IDsat enhancement

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006