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Mobility and Strain Effects on <110>/(110) SiGe channel pMOSFETs for High Current Enhancement

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10 Author(s)
Pan, J.W. ; Central R&D Div., United Microelectron. Corp., Hsin-Chu ; Liu, P.W. ; Chang, T.Y. ; Chiang, W.T.
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Mobility and strain mechanisms of SiGe channel pMOSFETs fabricated with <110> channel direction on (110) Si substrate (<110>/(110) SiGe channel) have been studied in details for the first time. The combination of substrate orientation, high mobility channel material and extrinsic stained-Si process demonstrates the ultra high mobility enhancement and results in 80% current gain. The piezoresistance coefficients of <110>/(110) SiGe channel p-MOSFETs were also studied to analyze the strain effect on current enhancement. We also compared the derived piezoresistance coefficients results of SiGe channel on (100) and (110) surfaces

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006