Referenced Items are not available for this document.
Electron transport properties in biaxially strained UTB MOSFETs and uniaxially strained tri-gate MOSFETs are experimentally investigated. It is found that the strain is still effective even in UTB regime and the mobility enhancement of 1.4 against control thick (20 nm) SOI is preserved in devices with TSoi = 2.4 nm. We also demonstrate 2.0x mobility enhancement in tri-gate nMOSFETs with uniaxial <110> tensile strain that is favored not only on (100) but also on (110) sidewall
Published in:
Electron Devices Meeting, 2006. IEDM '06. International
Date of Conference: 11-13 Dec. 2006
- Page(s):
- 1 - 4
- E-ISBN :
- 1-4244-0439-8
- Print ISBN:
- 1-4244-0438-X
- INSPEC Accession Number:
- 9485627
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/IEDM.2006.346811
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
