By Topic

Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Electron transport properties in biaxially strained UTB MOSFETs and uniaxially strained tri-gate MOSFETs are experimentally investigated. It is found that the strain is still effective even in UTB regime and the mobility enhancement of 1.4 against control thick (20 nm) SOI is preserved in devices with TSoi = 2.4 nm. We also demonstrate 2.0x mobility enhancement in tri-gate nMOSFETs with uniaxial <110> tensile strain that is favored not only on (100) but also on (110) sidewall

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006