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High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers

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12 Author(s)

This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006