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High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers

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12 Author(s)
J. -S. Moon ; HRL Laboratories, 3011 Malibu Canyon Rd. Malibu, CA 90265. Phone: (310)317-5461, Fax: (310)317-548, Email: ; D. Wong ; M. Antcliffe ; P. Hashimoto
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This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density

Published in:

2006 International Electron Devices Meeting

Date of Conference:

11-13 Dec. 2006