Referenced Items are not available for this document.
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented
Published in:
Electron Devices Meeting, 2006. IEDM '06. International
Date of Conference: 11-13 Dec. 2006
- Page(s):
- 1 - 4
- E-ISBN :
- 1-4244-0439-8
- Print ISBN:
- 1-4244-0439-8
- INSPEC Accession Number:
- 9476290
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/IEDM.2006.346798
- Product Type:
- Conference Publications
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