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Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling

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11 Author(s)
Colombeau, B. ; Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406. Tel: +65 6360.4504, fax +65 6362.2945, email: ; Mok, K.R.C. ; Yeong, S.H. ; Benistant, F.
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For the first time, this work shows that the design and optimization of nanoCMOS devices can be achieved from atomistic physics-based process modeling. Remarkable prediction of device characteristics can be obtained even for novel co-implant processes. This extends the strength of TCAD in manufacturing for future generations of nanoCMOS devices.

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

Dec. 2006