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Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

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7 Author(s)

We have investigated what effects randomly oriented and rotated poly-Si gate grains have on lateral carrier profiles in sub-50-nm MOSFETs by direct observations and electrical measurements. Since amorphous gates suppress random channeling penetration of pocket implants, we have increased effective mobility (40%), improved Vth roll-off characteristic (7 nm) and decreased Vth fluctuation (-26%)

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006