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Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates

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10 Author(s)
Terashima, K. ; Syst. Devices Res. Labs., NEC Corp., Kanagawa ; Manabe, K. ; Takahashi, K. ; Watanabe, K.
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The methods for controlling threshold voltage (Vth) of Ni-fully-silicide (Ni-FUSI)/HfSiON CMOSFETs on SOI substrates were investigated. We achieved the suitable Vth for both low standby power (LSTP) and low operation power (LOP) devices by using the adjustment of channel doping for NFETs with NiSi gate electrode and the phase controlled (PC) Ni-FUSI technique for PFETs. We also investigated the Vth control by implantation of F and N. Applying the F-implantation technique to Ni-FUSI/HfSiON CMOSFETs on SOI substrates has the possibility to realize Vth control for both LSTP and LOP devices by single phase Ni-FUSI (NiSi) gate electrode

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006