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Ni-based FUSI gates: CMOS Integration for 45nm node and beyond

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24 Author(s)

This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled poly etch-back process, dual work-function Ni-based FUSI CMOS circuits with record ring oscillator performance (high-VT applications) have been achieved (17ps at VDD=1.1V and 20pA/mum Ioff), meeting the ITRS 45nm node requirement for low power CMOS

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006