By Topic

The Doherty Power Amplifier With On-Chip Dynamic Bias Control Circuit for Handset Application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Joongjin Nam ; Dept. of Electr. Eng., Pohang Inst. of Sci. & Technol. ; Bumman Kim

A monolithic-microwave integrated-circuit Doherty power amplifier (PA) with an on-chip dynamic bias control circuit for cellular handset application has been designed and implemented. To improve the linearity and efficiency in the operation power ranges, the base and collector biases of the amplifiers, except the drive amplifier of the main path, are controlled according to the average output power. The base biases are controlled using the on-chip circuit and collector biases by the dc/dc chip to reduce the average dc consumption power. The power-added efficiency (PAE) is improved approximately 6% by the base dynamic bias control, and approximately 14% by the collector/base dynamic control from the class AB at Pout=16 dBm, respectively. If the dc/dc converter efficiency is 100%, the PAE could be improved approximately 17.5% from class AB, reaching to 29.2% at Pout=16 dBm. In the intermediate power level from 22 to 28 dBm, the PAE is over 34.3%. The average current consumption of the PA with the dynamic bias control is 22.5 mA in urban and 37.3 mA in suburban code-division multiple-access environments, which are reduced by 36%-46.7%, compared to the normal operation. The adjacent channel power ratio is below 47.5 dBc, and the PAE at the maximum power is approximately 43.3% in the dynamic bias operations

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:55 ,  Issue: 4 )