By Topic

A Novel Approach to Modeling Metal–Insulator–Metal Capacitors Over Vias With Significant Electrical Length

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Asahara, M. ; Satellink Inc, Garland, TX ; Campbell, C.F. ; Frensley, W.R.

In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacitor application arises. This paper is a solution provider, ushering in a new approach to modeling a shunt capacitor of large electrical length over grounding substrate vias. Our model is derived from a set of design equations that allows asymmetric coupled lines in an inhomogeneous medium to be approximated to symmetric coupled lines in a homogeneous medium. Here we gain a theoretical insight into the rationale behind this approximation. The new approach benefits from: 1) a four-port implementation providing two connections to top and bottom plates and 2) a drastic reduction in mathematical complexity without trading off accuracy or compatibility. Circuit and electromagnetic simulations has proven to be in good agreement with measurements of a test structure of electrical length 558deg at 50 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:55 ,  Issue: 4 )