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Nearly White-Light Emission From GaN-Based Light-Emitting Diodes Integrated With a Porous SiO 2 Layer

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5 Author(s)
Chih-Hao Hsieh ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Min-Yung Ke ; Ghien-An Shih ; Tzu-Yang Chiu
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In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO2 layer. The porous SiO 2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni-Au-SiO2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 9 )