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Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

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8 Author(s)
A. Ramdane ; France Telecom, CNET, Bagneux, France ; P. Krauz ; E. V. K. Rao ; A. Hamoudi
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A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-μm multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio for a 4-V voltage swing) are reported using this technique that preserves the material optical and electrical quality.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 9 )