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Accurate molecular beam epitaxial growth of vertical-cavity surface-emitting laser using diode laser reflectometry

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6 Author(s)
Li, G.S. ; Edward L. Ginzton Lab., Stanford Univ., CA, USA ; Yuen, W. ; Toh, K. ; Eng, L.E.
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Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical-cavity surface-emitting lasers (VCSELs) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system. Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures. Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 9 )

Date of Publication:

Sept. 1995

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