Accurate molecular beam epitaxial growth of vertical-cavity surface-emitting laser using diode laser reflectometry

Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical-cavity surface-emitting lasers (VCSELs) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system. Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures. Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.<
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