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Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique

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4 Author(s)
B. S. Ooi ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; S. G. Ayling ; A. C. Bryce ; J. H. Marsh

We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.<>

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 9 )