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Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT's

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2 Author(s)
Bashar, S.A. ; Dept. of Electron. & Electr. Eng., King''s Coll., London, UK ; Rezazadeh, A.A.

An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at λ=1310 nm and 1550 nm respectively

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 9 )

Date of Publication:

Sep 1995

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