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High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s

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8 Author(s)
Kuebart, W. ; Res. Centre, Alcatel SEL AG, Stuttgart, Germany ; Reemtsma, J.-H. ; Kaiser, D. ; Grosskopf, H.
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InP-based pin-HEMT receiver-OEIC's with different circuit layouts for bit rates up to 10 Gb/s are simulated, realized and characterized. The circuits under investigation are a high impedance amplifier, a common-gate circuit, and a transimpedance-cascode circuit. The high frequency behavior of all circuits is compared by means of on-wafer characterization. All circuits show a bandwidth of more than 5 GHz, the transimpedance circuit has the highest responsivity (12.9 dB A/W) and a very low average noise current of 11.5 pA/√(Hz) when assembled in a module. The receiver sensitivity of the transimpedance circuit in the module is measured to be as high as -19.2 dBm

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 9 )